UHV-CVD生长的SiGe多量子阱在热光电池领域的应用  

Application of a SiGe Multi-Quantum Well Grown by UHV-CVD for Thermophotovoltaic Cells

作　　者：孙伟峰[1] 叶志镇[1] 朱丽萍[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2005年第11期2111-2114,共4页半导体学报（英文版）

基　　金：国家科技部攀登项目;浙江省计划项目(批准号:981101040;991110535)资助~~

摘　　要：为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量.测量结果说明吸收峰接近黑体辐射峰1450nm波长,跃迁几率有所增加,这将大幅度提高热光电池的吸收效率,同时也为SiGe多量子阱中量子效应的存在提供了实验依据.To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVD Ⅱ system. The absorption measurement of the SiGe multi-quantum well by multiple internal reflection indicates that the extension of the absorption is up to 1450nm and transition probability caused by the quantum effect in the quantum well of strained SiGe thin layer is higher. Consequently, the absorption efficiency of thermophotovoltaic cells will be increased significantly.

关 键 词：多量子阱 窄带隙 热光电池 UHV—CVD 黑体辐射 

分 类 号：TM914[电气工程—电力电子与电力传动]