具有p型埋层PSOI结构的耐压分析  

A Breakdown Voltage Model of a PSOI Structure with a p-Type Buried Layer

作　　者：段宝兴[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2005年第11期2149-2153,共5页半导体学报（英文版）

摘　　要：提出了一种具有P型埋层的PSOI器件耐压新结构，称为埋层PSOI（BPSOI）．其耐压机理是，通过P型埋层电荷产生的附加电场调制作用，导致表面电场分布中产生新的峰而使击穿电压提高；P型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低．借助二维MEDICI数值分析软件，获得此结构较一般PSOI的击穿电压提高52％～58％、比导通电阻降低45％-48%．A new PSOI structure with a p-type buried layer is developed, which is called BPSOI. Its mechanism of breakdown is an additive electric field modulation, which inducts new electric field peaks in surface electric field distribution by p-type buried layer charges. The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the ptype buried layer. The result is that the breakdown voltage is increased by 52 %- 58 % and the on-resistance is decreased by 45% - 48 % in virtue of the 2D MEDICI simulation.

关 键 词：BPSOI附加电场 击穿电压 比导通电阻 

分 类 号：TN432[电子电信—微电子学与固体电子学]