Ku波段源极调谐HFET MMIC VCO  

A Ku Band HFET MMIC VCO with Source Terminal Tuning

作　　者：王绍东[1] 高学邦[1] 吴洪江[1] 吴阿惠[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《Journal of Semiconductors》2005年第11期2191-2195,共5页半导体学报（英文版）

摘　　要：利用S参数分析和负阻分析设计了一个源端调谐的Ku波段HFET单片集成VCO，并获得了一次设计投片成功．提取了GaAs HFET的大信号模型，利用栅源终端阻抗的二维扫描确定了漏极负阻，以此为依据进行输出匹配网络的优化设计．给出了电路制作和测试结果，在17．79-17．89GHz频率上获得了16dBm的输出功率．Based on S-parameter and negative impedance analyses,a Ku band H FET MMIC VCO, which is turned at source,is designed and fabricated successfully for the first time. A large signal model is developed to perform nonlinear analysis. A two dimensional impedance sweep is used to determine the output impedance network match in gate and source ports. The measurement results show that a 16dBm output power over a 17.79- 17.89GHz frequency range is achieved.

关 键 词：微波单片集成电路 压控振荡器 异质结场效应晶体管 砷化镓 

分 类 号：TN752.5[电子电信—电路与系统]