离子束辅助沉积铪膜抑制栅电子发射性能研究  

Electron emission suppression characteristic of molybdenum grid coated with Hf by ion beam assisted deposition

作　　者：蒋军[1] 江炳尧[1] 郑志宏[1] 任琮欣[1] 冯涛[1] 王曦[1] 柳襄怀[1] 邹世昌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心,上海200050

出　　处：《功能材料》2005年第11期1673-1675,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(G2000067207-2)

摘　　要：利用离子束辅助沉积(IBAD)方法在Mo栅极表面沉积铪膜,采用模拟二极管方法测量和比较阴极活性物质Ba、BaO蒸发在镀铪和纯钼栅极表面的电子发射性能。实验结果表明,镀铪栅极抑制电子发射性能较好,并初步探讨了离子束辅助沉积铪膜抑制栅电子发射的机理。Hf was deposited onto molybdenum-grids by ion beam assisted deposition （IBAD） method. Electron emission characteristics from molybdenum-grids coated with and without Hf contaminated by active electron-emission substance of the cathode were measured using the analogous diode method. The results show that electron emission from the grids coated with Hf film is less than that without Hf film,and the mechanism for suppression of electron emission of the grid with Hf film was discussed.

关 键 词：抑制电子发射 铪 离子束辅助沉积 钼栅极 

分 类 号：TG146.4[一般工业技术—材料科学与工程]