退火处理对SnO_2:Sb薄膜结构和光致发光性质的影响  

Effect of Annealing on Structure and Photoluminescence Characters of SnO_2:Sb Thin Films

作　　者：王玉恒[1] 马瑾[1] 计峰[1] 余旭浒[1] 马洪磊[1] 

机构地区：[1]山东大学光电材料与器件研究所,山东济南250100

出　　处：《稀有金属材料与工程》2005年第11期1747-1750,共4页Rare Metal Materials and Engineering

基　　金：教育部科学技术研究重点项目(02165);博士点基金资助项目(20020422056)

摘　　要：用射频磁控溅射法在玻璃衬底上制备出SnO2:Sb薄膜,研究了不同掺杂和退火对薄膜结构的影响。制备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为(110)。室温下光致发光测量首次观测到392nm附近存在紫外-紫光发射,并对SnO2:Sb的光致发光机制进行了探索性研究。The SnO2：Sb films was prepared on glass substrates by rf magnetron sputtering method. The effect of different doping content and annealing on structure of the thin films were investigated. Result show that the prepared samples are polycrystalline thin films with rutile structure of pure SnO2 and have orientation of （110） direction. The crystallization of the samples changes with the different doping content and annealing conditions. The photoluminescence of the samples was measured at room temperature. For the first time, a UV-violet luminescence peak near 392 nm was observed, and the luminescence mechanism was also tentatively investigated.

关 键 词：射频磁控溅射法 SnO2:Sb薄膜 光致发光 

分 类 号：TN304.055[电子电信—物理电子学]