离子辅助沉积对TiO_2薄膜应力的影响  

Analysis of stress in TiO_2 thin film prepared with ion assisted deposition

作　　者：赵永江[1] 黄腾超[1] 沈伟东[1] 顾培夫[1] 刘旭[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2005年第11期1816-1818,1832,共4页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(60478301)

摘　　要：对在离子辅助沉积(IAD)和常规工艺条件下镀制的TiO2薄膜的应力进行了试验研究,并探讨了利用台阶仪测量镀膜前后基板表面曲率的方法.结果表明,当基板温度低于100℃时,在离子辅助沉积工艺条件下镀制的TiO2薄膜的应力略大于在常规工艺条件下镀制的薄膜的应力;随着薄膜厚度的增加,TiO2薄膜应力逐渐减小,从125 nm的392 MPa下降到488 nm的30 MPa;离子源阳极电压对薄膜应力影响较大,在100 V时薄膜应力为164MPa,当电压升高到190 V时,应力下降到75 MPa.The stress of TiO2 thin films deposited with and without ion assisted deposition （IAD） was experimentally investigated. And the curvature of the deformed substrates was measured by profiler. Experimental results showed that TiO2 film stress with IAD was larger than that without IAD below the deposition temperature of 100℃, and that TiO2 film stress decreased with increasing film thickness. When the film thickness increased from 125 nm to 488 nm, the stress decreased from 392 MPa to 30 MPa. And anode voltage of the ion source affected TiO2 film stress. From 100 V to 190 V, the TiO2 film stress dropped from 164 MPa to 75 MPa.

关 键 词：TIO2薄膜 离子辅助沉积 应力 

分 类 号：O484[理学—固体物理]