超辐射发光二极管抗反射膜的设计  

Design of Antireflection Coating for Superluminescent Diodes

作　　者：张一文[1] 王品红[2] 廖柯[2] 

机构地区：[1]重庆邮电学院光电学院,重庆400065 [2]重庆光电技术研究所,重庆400060

出　　处：《光学与光电技术》2005年第6期32-34,共3页Optics & Optoelectronic Technology

摘　　要：分析了设计超辐射发光二极管抗反射膜的光导纳法,介绍了有效折射率的概念。选用TiO2和SiO2两种材料给出了中心波长为850 nm时的设计实例。结果表明设计时要考虑有效折射率,才能获得好的性能。The optical admittance approach to design antireflection coatings of superluminescent diodes is described and effective refractive index is introduced. A design example is given for the center-wavelength of 850nm by choosing TiO2 and SiO2, and the result shows that effective refractive index must be considered while designing in order to achieve good performance.

关 键 词：超辐射发光二极管 抗反射膜 光导纳法 有效折射率 

分 类 号：O484.4[理学—固体物理]