碲镉汞表面硫化的光电子能谱及器件性能研究  

Surface Sulfide Treatment Characterization of HgCdTe by XPS and Electrical Characterization of Photodiode

作　　者：汤英文[1] 庄春泉[1] 许金通[1] 游达[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]传感技术国家重点实验室,上海技术物理研究所,中国科学院,上海200083

出　　处：《激光与红外》2005年第11期835-836,848,共3页Laser & Infrared

摘　　要：利用X射线光电子谱(XPS)对HgCdTe表面的硫化特性进行了研究,发现溴腐蚀后的表面硫化处理可以去掉表面的氧化层,Te富集的程度大大减少,硫化处理后再长硫化锌对器件进行钝化,可以大大减少器件的表面漏电,增加器件工作电压和提高器件性能。The surface sulfide treatment characterization of HgCdTe has been studied by XPS. Sulfide treatment after Br2-C2 H5 OH etching can remove the oxide of the surface of HgCdTe, and decrease Te enriched. Then, in order to improve the performance of the photodiodes,the ZnS layer deposited after sulfidation is used to passivate the photodiode. The measurement shows that the photodiodes can low the dark current, and increase the operating voltage.

关 键 词：光电子谱 HGCDTE 表面硫化 电学性质 

分 类 号：TN304.2[电子电信—物理电子学] O472.1[理学—半导体物理]