P型氮化镓表面的X射线光电子能谱研究  

X-ray Photoelectron Spectroscopy Study to the Surface of p-type Gallium Nitride

作　　者：许金通[1] 汤英文[1] 游达[1] 龚海梅[1] 李向阳[1] 赵德刚[2] 

机构地区：[1]传感技术国家重点实验室中国科学院上海技术物理所,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《激光与红外》2005年第11期883-884,893,共3页Laser & Infrared

摘　　要：文章研究了P型氮化镓材料表面自然氧化,故意氧化以及盐酸处理等三种不同情况下的X射线光电子能谱(XPS)。结果发现800℃下在空气中故意氧化6m in后,P型氮化镓材料表面的镓(Ga2p3/2)峰出现较大移动,向高能端移动了0.88eV(与盐酸处理的样品相比),O1s峰向低能方向移动了0.9eV,且镓氮原子含量比最大;在空气中自然氧化和盐酸处理的两个样品峰的移动很小,各个峰的移动大约在0.1eV左右,但是用盐酸处理后的样品的含氧量有所下降,且盐酸处理的样品的镓氮原子含量比最小,镓氮的原子含量比小有利于形成镓空位,而镓空位是受主,这样镓氮原子含量比越小越有利于形成P型氮化镓欧姆接触。The X-ray photoelectron spectroscopy study to surface of p-type gallium nitride is carri.ed out, which is treated by spontaneous or purposive oxidation and with solution of hydrochloric acid. Results have revealed that when the p-type GaN sample is oxidized at 800℃ for 30 min in air ambient, peak shift of the Ga 2p/s 0.88eV in the high level direction compared with the hydrochloric acid treated sample and peak shift of the Ols is 0.9eV in low level direction. The ratio of Ga to N purposive oxidation sample is the highest. In other samples, the peak shifts is very small, only about 0. 1 eV. But the content of oxygen in sample treated with hydrochloric acid is decreased a little, and the ratio of Ga to N is the smallest. It is helpful to form the vacancy of Ga and the vacancy of Ga is an acceptor. Small value of the ratio of Ga to N is helpful to form ohmic contact on p-type GaN.

关 键 词：氮化镓 氧化 光电子能谱分析 

分 类 号：TN305.2[电子电信—物理电子学] O472.1[理学—半导体物理]