氘化硼掺杂金刚石n型电导的研究  

Study of n-type electrical conductivity in deuterated boron-doped diamond

作　　者：俞琳[1] 刘东红[1] 胡连军[1] 戴瑛[1] 龙闰[1] 闫翠霞[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《功能材料》2005年第12期1837-1838,共2页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10374060);山东省自然科学基金资助项目(Y2003A01)

摘　　要：室温下缺少浅施主中心,已经成为金刚石材料制造电子器件的主要障碍之一。最近报道显示硼掺杂p型同质外延金刚石暴露在氘离子束中能形成浅施主态的n型电导,这是在外延金刚石材料中首次测出的浅施主能级。本文分析研究了目前p型金刚石出现导电类型转换这一新现象的最新研究进展。The absence of a shallow donor in diamond with reasonably room temperature has become one of the key obstacle to make diamond-based semiconductor devices. Most recently it has been reported that exposure of p-type （B doped） homoepitaxial diamond layers to deuterium plasma can result in the formation of n-type diamond with a shallow donor state. It＇s the first time we can identify a shallow donor state in homoepitaxial damond. In this paper, the newly progress on research of conductivity type transition in diamond has been reviewed and analyzed.

关 键 词：金刚石 氘化 n型电导 掺杂 

分 类 号：O474[理学—半导体物理]