偏压对空心阴极放电等离子体溅射制备氮化碳薄膜的影响  

Effect of bias voltage on the formation of CN_x films in hollow cathode type discharge plasma sputtering techniques

作　　者：杨平[1] 冯贤平 施芸城[3] 闫永辉[3] 

机构地区：[1]东华大学材料科学与工程学院,上海200051 [2]波多黎各大学物理系,圣胡安009313343 [3]东华大学物理系,上海200051

出　　处：《物理实验》2005年第12期15-19,共5页Physics Experimentation

基　　金：上海市科学技术发展基金项目(No.0252nm110);教育部科学技术研究重点项目(No.03077);波多黎各大学启动基金

摘　　要：利用空心阴极放电等离子体源在Si(100)单晶衬底上沉积了氮化碳薄膜.薄膜的表面形貌表明所得的薄膜非常的均匀光滑.用X光电子能谱、拉曼和红外吸收光谱对薄膜的结构、成分和化学键等进行了研究.在拉曼光谱中可以看到典型的G,D和C N键的峰.当偏压为250 V时,薄膜拉曼光谱中的D峰完全消失,此时薄膜的N/C比达到了0.81.通过对薄膜的XPS分析也表明薄膜中C—C,sp2CN和sp3CN键的组分也发生了明显的变化.当偏压为250 V时薄膜的sp3CN相的含量达到了最大值为40%,同时氮含量也达到了最大值.实验结果给出了直接的证据:薄膜的结构模式可以通过改变偏压来得到控制.Carbon nitride films are deposited on Si （100） single-crystalline wafers by DC hollow cathode discharge （DC-HCD） type plasma. The surface morphology of the film indicates the very smooth and uniform CN, films have been obtained. The structures, compositions and chemical bonding states of the obtained films are investigated by using SEM, XPS, Raman and FTIR. Typical G, D and C^N bands are identified. The bias voltage of 250 V results in a complete disappearance of Dband in Raman spectrum of the film. Consequently, the obtained maximal N/C ratio is up to 0.81. Obvious variations of components ratio among C--C, sp^2CN and sp^3bonds are also observed based on XPS of the films. The maximal fraction of sp^3CN bond up to 40% and N content at the bias voltage of 250 V is obtained. The experimental results show direct evidence that the modes of the films could be controlled by variations of bias voltage.

关 键 词：氮化碳薄膜 直流空心阴极放电 偏压 

分 类 号：O484.1[理学—固体物理]