氮化物抛物量子阱中类氢杂质态能量  

Energy Level of a Hydrogenic Impurity in Nitride Parabolic Quantum Well

作　　者：赵凤岐[1] 萨茹拉[1] 乌仁图雅[1] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022

出　　处：《发光学报》2005年第6期719-722,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金资助项目(10364003)

摘　　要：采用变分方法研究氮化物抛物量子阱(GaN/A lxGa1-xN)材料中类氢杂质态的能级,给出基态能量、第一激发态能量、结合能和跃迁能量等物理量随抛物量子阱宽度变化的函数关系。研究结果表明,基态能量、第一激发态能量、基态结合能和1 s→2p±跃迁能量随着阱宽L的增大而减小,最后接近于GaN中3D值。GaN/A l0.3Ga0.7N抛物量子阱对杂质态的束缚程度比GaAs/A l0.3Ga0.7As抛物量子阱强,因此,在GaN/A l0.3-Ga0.7N抛物量子阱中束缚于杂质中心处的电子比在GaAs/A l0.3Ga0.7As抛物量子阱中束缚于杂质中心处的电子稳定。The group Ⅲ nitrides GaN, AIN, InN and their ternary compounds display a promising potential for optoelectronics applications, particularly laser diodes emitting in blue and ultraviolet range. These materials are well suited to form semiconductor quantum well and superlattices in many optoelectroic devices. There is an increasing interest nowadays in the quantum wells generated by nitrides GaN, AIN, InN and their ternary compounds due to conspicuous device applications, such as high-brightness blue （or green ） light emitting diodes and laser diodes. However, the properties of the nitride parabolic quantum well materials, to our knowledge, have rarely been investigated. The parabolic quantum well structure has been successfully fabricated by the molecular beam epitaxy growth method. There are two kinds of parabolic quantum well, one is compositional parabolic quantum well, and another is doping parabolic quantum well. Therefore, the research of the nitride parabolic quantum well materials is very needed. In this paper, the energy level of a hydrogenic impurity in GaN/AlxGa1-x N compositional parabolic quantum well was investigated by variational method. The ground state energy, the first excited state energy, the binding energy and the 1 s→2p± transition energy of the hydrogenic impurity in a GaN/Al0.3 Ga0.7N parabolic quantum well as functions of the well width L are given. The numerical results indicated that the ground state energy, the first excited state energy, the binding energy and the 1 s→2p± transition energy decrease with increasing well width L and finally closes to the corresponding values of 3D GaN. The bound degree of the GaN/Al0.3Ga0.7N parabolic quantum well to the hydrogenic impurity is stranger than that of the GaAs/Al0.3Ga0.7 As parabolic quantum well. Therefore, the electron coupled to a hydrogenic impurity in the GaN/Al0.3 Ga0.7N parabolic quantum well is stable than that in the GaAs/Al0.3Ga0.7As parabolic quantum well.

关 键 词：氮化物抛物量子阱 类氢杂质态 结合能 

分 类 号：O471.1[理学—半导体物理] O472.3[理学—物理]