PAHFCVD金刚石膜表面形貌的研究  

The Study on Surface Morphology of Diamond Film Deposited by PAHFCVD

作　　者：付强[1] 石玉龙[1] 丁发柱[1] 

机构地区：[1]青岛科技大学材料与环境科学学院,山东青岛266042

出　　处：《青岛科技大学学报（自然科学版）》2005年第6期513-515,522,共4页Journal of Qingdao University of Science and Technology:Natural Science Edition

基　　金：国家自然科学基金资助项目(50273016)

摘　　要：采用等离子辅助热丝化学气相沉积(PAHFCVD)装置进行了金刚石薄膜、碳化钛/金刚石复合膜、掺硼金刚石薄膜的制备.制备条件分别为:V(CH)4:V(H2)=3:100,载气流量5～50 cm3·s-1,钛源钛酸异丙酯(Ti[OC3H 7]4),硼源硼酸三甲酯(BC3O4H9),基体温度820～860℃,基体偏压300V,沉积气压4 kPa.运用扫描电子显微镜(SEM)、X射线衍射(XRD)和能量扩散电子谱(EDX)等分析手段对PAHFCVD金刚石膜、金刚石复合膜和掺硼金刚石膜进行了表征.结果发现,金刚石/碳化钛膜和掺硼金刚石膜主要晶面为(111)面.Diamond,diamond/TiC composite and boron doped diamond films were deposited by plasma assistant hot-filament chemical vapor deposition（PAHFCVD）. The He flow rate was 200 cm^3 ·s^-1 , the ratio of CH4to H2 was 3 ： 100; the carrying gas flow rate was 5～50cm^3 ·s^-1 ,Ti[OC3H7]4 and BC3O4H9 were used as titanium and boron resources, respectively, the deposition temperature was 820～860℃ ,the bias voltage of the sample was 300 V and the deposition pressure was 4 kPa. SEM, XRD and EDX were carried out to investigate the surface characteristics of the films. We found that the crystallites of diamond/TiC and boron doped diamond films grew mainly along the [111] axis.

关 键 词：金刚石 等离子体热丝化学气相沉积 复合膜 

分 类 号：TB33[一般工业技术—材料科学与工程]