MOCVD制备的ZnO薄膜及其在太阳电池背电极应用  

ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells

作　　者：陈新亮[1] 徐步衡[1] 薛俊明[1] 赵颖[1] 张晓丹[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所

出　　处：《Journal of Semiconductors》2005年第12期2363-2368,共6页半导体学报（英文版）

基　　金：天津市自然科学基金(批准号:043604911;05YFJMJC01600);国家重点基础研究发展规划(批准号:G2000028202;G2000028203)资助项目~~

摘　　要：研究了利用LPMOCVD技术制备的不同B掺杂浓度对ZnO薄膜的微观结构和光电特性影响.对XRD和SEM的研究结果表明,B掺杂对ZnO薄膜的微观结构有重大影响.通过优化工艺,当B2H6流量为17sccm(约1%掺杂浓度)时,在20cm×20cm大面积衬底上生长出厚度为700nm,方块电阻为38Ω/□,透过率大于85%,迁移率为17.8cm2/(V·s)的绒面结构ZnO薄膜.其应用于太阳电池背反射电池后,可使电池短路电流提高将近3mA,使20cm×20cm面积的aSi集成电池效率高达9.09%.Microstructure and photo-electronic properties of ZnO films grown by metal organic chemical vapor deposition at different B2 H6 flow rates are investigated. XRD spectra and SEM photos indicate that B-doping plays a great role on the microstructure of ZnO films. By optimizing conditions with the B2H6 flow rate as the dopant gas set at 17sccm,a low sheet resistance （38Ω/□）, and high transparency （〉85 % ） in the range of visible and infrared light, and a mobility of 17.8cm^2/（V · s） are obtained for a 700nm thick ZnO film deposited on a 20cm×20cm substrate at a low temperature of 170℃. After the ZnO film is applied as the back contact in a solar cell,Jsc can be effectively improved by nearly 3mA,and a 9.09 % efficiency is obtained in a large-area （20cm× 20cm） a-Si integrated solar cell.

关 键 词：MOCVD ZNO薄膜 B掺杂 背电极 太阳电池 

分 类 号：TN304[电子电信—物理电子学]