低电场应力下闪速存储器的退化特性  

Degradation in Flash Memory Under Low Electric Field Stress

作　　者：郑雪峰[1] 郝跃[1] 刘红侠[1] 马晓华[1] 

机构地区：[1]西安电子科技大学微电子学院

出　　处：《Journal of Semiconductors》2005年第12期2428-2432,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2004AA1Z1070);国防预先研究计划(批准号:41308060305)资助项目~~

摘　　要：基于负栅源边擦除的闪速存储器存储单元,研究了形成应力诱生漏电流的三种导电机制,同时采用新的实验方法对引起瞬态和稳态电流的电压漂移量进行了测量.并利用电容耦合效应模型对闪速存储器存储单元的可靠性进行了研究,结果表明,在低电场应力下,其可靠性问题主要由载流子在氧化层里充放电引起.Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are measured by new experimental methods. The reliability of flash memory cells is investigated using the capacitance coupling effect model. The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide.

关 键 词：闪速存储器 应力诱生漏电流 低电场应力 电容耦合效应 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]