微测辐射热计的非均匀性校正新方法  

New nonuniformity correction method of microbolometer

作　　者：孟丽娅[1] 袁祥辉[1] 吕果林[1] 黄友恕[1] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《光电工程》2005年第12期78-81,共4页Opto-Electronic Engineering

基　　金：国家自然科学基金(60377036)资助项目

摘　　要：针对微测辐射热计的非均匀性校正对衬底温度要求较高的问题,从探测器的线性模型出发,提出了一种新型非均匀性校正方法。方法首先令阵列中不同探测单元的光响应率比和衬底温度响应率比分别相等,达到补偿衬底温度变化的目的;随后再执行传统的两点非均匀性校正。用数模转换器将存储在EPROM内的偏置电压输出到MOS管的栅极上,实现对偏置电流的控制,调节探测元及补偿元的响应率。仿真结果表明,该校正方法可以在变化范围约为4K的均匀衬底温度内达到良好校正效果。Two-point nonunfonnity correction for microbolometer detector only functions well in a nearly constant substrate temperature. Based on a linear model of detector, a new nonunformity correction method is proposed in the paper. On the conditions that all the pixels＇ responsivity ratios both for light and substrate temperature are equal, two-point correction can be implemented in wider uniform substrate temperature, The DAC transfers thedata stored in EPROM to the gate of MOS transistor so as to control the bias current, and tune the responsivity of detector and dummy detector. The simulation results show that such nonunifonnity correction can work in uniform substrate temperature with flucmant range of 4K.

关 键 词：微测辐射热计 非均匀性校正 衬底温度 响应率 

分 类 号：TL81[核科学技术—核技术及应用]