离子束增强沉积Al-N共掺杂ZnO薄膜的制备  

Zinc Oxide Films Co-Doped with Aluminium and Nitrogen Prepared by IBED Method

作　　者：谢建生[1] 李金华[1] 袁宁一[1] 陈汉松[1] 周懿[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213016

出　　处：《江苏工业学院学报》2005年第4期6-9,共4页Journal of Jiangsu Polytechnic University

摘　　要：用Al2O3粉体与ZnO粉体均匀混合,压制成溅射靶。在Si和SiO2/Si衬底上,用离子束增强沉积(IBED)方法对沉积 膜作Ar+/N+注入,制备Al-N共掺杂氧化锌薄膜(ANZO)。在氮气氛中作适当的退火,可以方便地获得取向单一、结构致 密、性能良好的共掺杂ZnO薄膜。探索用IBED方法在Si和SiO2衬底上制备优质掺杂薄膜的可能性。初步研究了ANZO共掺 杂薄膜的结构、电学和光学性能。Polycrystalline zinc oxide thin films co-doped with Al-N （ANZO） were prepared on Si and SiO2/Si substrates by modified Ion Beam Enhanced Deposition （IBED） method. Al2O3 and ZnO powders were mixed and pressed as the sputtering target. Mixing beam of argon and nitrogen ions was implanted into the deposited films during sputtering. The experiment results indicated that the ANZO films with satisfactory properties and dense structure could be obtained easily by selecting suitable annealing condition in nitrogen atmosphere. The results also revealed that the ZnO films showed a hexagonal wurtzite structure, and the extent of c-axis orientation. This study looked into the probabilities of preparing the co-doping ZnO films with high quality on Si and SiO2/Si substrates by modified Ion Beam Enhanced Deposition （IBED） method, and researched roughly into the structure, electrical and optical properties of the ANZO films.

关 键 词：氧化锌薄膜 退火 离子束增强沉积 

分 类 号：TN213[电子电信—物理电子学] O552.6[理学—热学与物质分子运动论]