氧化锌薄膜的p型掺杂研究现状  

Investigation of p-Type Doping in Zinc Oxide Thin Films

作　　者：袁宁一[1] 李金华[1] 范丽宁[1] 周懿[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213016

出　　处：《江苏工业学院学报》2005年第4期54-57,共4页Journal of Jiangsu Polytechnic University

摘　　要：ZnO薄膜作为一种多用途的光电材料,一直受到国内外学术界的广泛关注。为了开发ZnO短波长光电器件,首要解决的 关键问题是氧化锌的p型掺杂。综述了目前国际上常用的氧化锌p型掺杂方法,对不同方法制备的p型ZnO薄膜的性能进行了 分析比较。Very recently, zinc oxide （ZnO） has attracted much attention because of its wide application for various optoelectronic devices, such as UV photo-detectors and emitting diodes. In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved. Different p-type doping in ZnO films were summed up. The characteristics including resistivity hole concentration, and mobility of p-type ZnO thin films prepared by different methods were compared.

关 键 词：氧化锌薄膜 P型掺杂 空穴载流子浓度 迁移率 

分 类 号：TB43[一般工业技术] O484.4[理学—固体物理]