ZnO基紫外探测器的研究进展  

Recent Advances in Research on UV Detector Based on ZnO

作　　者：赵懿琨[1] 连洁[1] 张飒飒[1] 王公堂[2] 宫文栎 于元勋[3] 卜刚[1] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]山东师范大学物理学院,济南250014 [3]山东省教育学院数理系,济南250013

出　　处：《材料导报》2006年第1期109-112,共4页Materials Reports

基　　金：山东省中青年科学家基金(2004BS01007)

摘　　要：ZnO是一种新型的宽带隙半导体光电材料,可用于制作高性能的紫外探测器,是未来半导体紫外探测器的发展重点。介绍了ZnO基紫外探测器常见的器件结构、探测材料的基本特性和主要制备方法,以及器件近期的研究进展,并扼要分析了其今后的发展方向。ZnO is a novel material for wide-band photoelectric semiconductor which can be used in producing ultravioler（UV） detectors with high performance. It is believed that the UV detectors based on ZnO films will be one of the development trends in semiconductor UV detectors in the near future. This paper describes the struture and study advsances of the UV detectors based on ZnO thin films in detail. Meanwhile, the structural, optical and electrical properties of ZnO films are summarized, the methods for preparing it and recent research progress in UV detectors are reviewed. And some development features in the coming years are also briefly analyzed.

关 键 词：ZNO薄膜 紫外探测器 宽带隙半导体 

分 类 号：TN23[电子电信—物理电子学] TN36