平直界面一维晶体生长问题的相似解  

Similar solution to one-dimensional crystal growth question of the straight interface

作　　者：刘竞[1] 

机构地区：[1]北京科技大学数学力学系,北京100083

出　　处：《石家庄职业技术学院学报》2005年第6期1-3,共3页Journal of Shijiazhuang College of Applied Technology

摘　　要：对于平直界面下由过冷边界开始的熔体的一维凝固过程,考虑液态中远场温度高于凝固温度,而底板温度低于凝固温度,利用相似性解法分别求解固液态温度,分析其结果,说明由低温区长入高温区的界面总是稳定的,从而更加完善了一维晶体生长理论.For the one-dimension solidifying course by subcooling border under the straight interface it is considered that the liquid temperature of far field is higher than the solidifying temperature and baseplate temperature is lower than the solidifying temperature. By using the similar solution to solve and analyse the solid liquid temperature respectively,the result shows that the interface from low temperature district to high temperature district is always steady. Thus it perfect the one-dimension crystal growth further.

关 键 词：晶体生长 平直界面 偏微分方程 相似性解 

分 类 号：TG111.4[金属学及工艺—物理冶金] O781[金属学及工艺—金属学]