硅外延层电阻率测量值一致性研究  

A Study on the Conformity of the Resistivity Measurements of Epi-Layers on Silicon

作　　者：刘学如[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1996年第3期198-200,共3页Microelectronics

摘　　要：外延层电阻车是外延片的重要特征参数之一。如何准确地测量外延层电阻率，以满足器件研制的需要，是检测人员所关注的一个重要课题。对目前常用的几种外延层电阻率测量方法进行了比较，指出了其各自的优缺点，讨论了测量中存在的问题．针对这些问题，采取了相应的措施，试验和分析结果表明，几种测试方法的结果获得了相当好的一致性，测量相对误差可控制在５％以内，能够满足现有器件对外延片电阻率精度的要求。The resistivity of epi-layers on Si is one of the important characteristics of epi-wafers.To measure this value accurately, some measures should be taken. Four methods currently used in the measurement are compared. Their advantages and disadvantages are pointed out. In light of the problems with different methods, corresponding measures are taken. Experiments and analysis show good conformity is obtainable with different measurements, and relative measurement errors can be limited within 5%, satisfying the accuracy requirement for device fabrication.

关 键 词：半导体器件 外延硅片 硅外延工艺 外延层电阻率 

分 类 号：TN304.054[电子电信—物理电子学] TN304.12