多层难熔金属的刻蚀工艺技术研究  

Etching Technology of Refractory Metals Multilayer

作　　者：段雪[1] 邓建国[1] 刘英坤[1] 王书明[1] 苏丽娟[1] 韩东[1] 林率兵[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《真空科学与技术学报》2005年第6期463-466,470,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：分析了用反应离子刻蚀(RIE)系统刻蚀多层难熔金属的可行性。研究了用下电极表层为阳极氧化铝的RIE完整刻蚀Au/Pt/TiW/Ti四层金属时氧化铝在Ar/SF6和Ar/CF4等离子体中对聚合作用的影响。通过实验发现,下电极表面的氧化铝经氩离子溅射会参与化学反应并加剧SF6等离子体中的聚合作用,形成大量聚合物。而在CF4等离子体中,下电极氧化铝的影响较小,聚合作用较弱,有利于多层难熔金属的刻蚀。提出了用Ar/CF4/CF4+O2完整刻蚀Au/Pt/TiW/Ti四层金属的三步刻蚀工艺技术。应用三步刻蚀工艺技术刻蚀具有微细图形、多层难熔金属的器件芯片,获得了良好的刻蚀效果。Refractory metals muhilayer, grown on silica coated Si wafer, was etched by reactive ion etching （RIE）. Influence of the anedized A1 surface layers of the lower electrode on polymerization in etching of the Au/Pt/TiW/Ti multilayer with Ar/SF6 and Ar/CF4 plasma, was studied, respectively.The results show that strong chemical reaction of the impinging Ar ions and the porous, anodized A1 layers produces fairly large amount of polymer in the SF6 plasma, whereas much weaker polymerization was observed in CF4 plasma etching of the multilayer. The 3-step reactive ion etching of Au/Pt/TiW/Ti with Ar/CF4/CF4 ＋ O2 plasma was developed with good results in fabricationg devices made of refractory metals multilayer, with sub-micron featttre size.

关 键 词：RIE 多层难熔金属 阳极氧化铝 聚合作用 

分 类 号：TN305.7[电子电信—物理电子学]