SiGe HBT大信号等效电路模型  

SiGe HBT large signal equivalent circuit model

作　　者：胡辉勇[1] 张鹤鸣[1] 吕懿[1] 戴显英[1] 侯慧[1] 区健锋[1] 王伟[1] 王喜嫒[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2006年第1期403-408,共6页Acta Physica Sinica

基　　金：国家部委预研基金(批准号:41308060108);模拟集成电路国家重点实验室基金(批准号:51408010301DZ01);西安电子科技大学青年科研工作站基金(批准号:03011#)资助的课题~~

摘　　要：基于SiGeHBT(异质结双极晶体管)的物理模型,建立了描述SiGeHBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等,模型分为本征和非本征两部分,物理意义清晰,拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下,利用该模型对SiGeHBT器件进行了交直流特性模拟分析,模拟结果与理论分析结果相一致,并且与文献报道的结果符合较好.A large signal equivalent circuit model for SiGe HBT is established based on the physical model of the transistor. The quasi saturation effect and the self-heating effect are taken into account in this equivalent circuit model. The model is composed of the intrinsic and the extrinsic parts, and has the features of clear physical meaning and simple topology. The model is embedded in the DEVEQ（Device Equations Developer） of PSPICE and simulated and analyzed by the PSPICE. The results conform to the theoretically analyzed conclusion and are in accordance with the published results in the literature.

关 键 词：SIGE HBT 等效电路模型 PSPICE 

分 类 号：TN322.8[电子电信—物理电子学]