硅材料及其电化学研究进展  

Research Progress in Silicon Material and Its Electrochemistry

作　　者：宋晓岚[1] 杨海平[1] 史训达 何希[1] 邱冠周[1] 

机构地区：[1]长沙中南大学资源加工与生物工程学院无机材料系,410083 [2]有研半导体材料股份有限公司硅片制造事业部,北京100088

出　　处：《材料导报》2006年第2期21-25,共5页Materials Reports

基　　金：国家自然科学基金项目资助(59925412);湖南省自然科学基金项目资助(03JJY3015)

摘　　要：硅材料是现代信息科技的主要载体,而其电化学研究则是正确认识和应用硅材料的前提和基础。从硅的表面和界面特性出发,综述了硅的电化学方面的研究进展,阐述了硅电极的阳极和阴极反应行为,总结了硅的刻蚀以及多孔硅的电化学形成机制和影响因素,并进一步展望了硅材料电化学研究的未来发展方向。Silicon material is primary carrier of modern information science and technology, and the research on electrochemistry of silicon is the theoretical base of the cognizing and applying silicon material rightly. In this paper, the surface and interface characteristics of silicon are introduced, the latest progresses of research on its electrochemistry are reviewed, the anodie and the cathodal properties of Si electrodes are analyzed, the etching of silicon and formation mechanism of porous silicon and their influencing factors are summarized, and developing direction of electrochemistry of silicon materials in future is pointed out.

关 键 词：硅材料 电化学 电极反应 刻蚀 多孔硅 电化学研究 信息科技 界面特性 反应行为 

分 类 号：TN304.12[电子电信—物理电子学] TQ423.96[化学工程]