Ti-Si_(0.84)Ge_(0.16)和Ti-Si系统的温度特性研究  

Investigations into Temperature Characteristics of Ti-Si_(0.84)Ge_(0.16) and Ti-Si Systems

作　　者：李翊[1] 张伟[1] 许军[1] 陈长春[1] 单一林[1] 熊小义[1] 李希有[1] 刘志弘[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2006年第1期33-35,共3页Microelectronics

基　　金：国家高技术发展研究(863)计划资助项目(2002AA1Z1610)

摘　　要：实验分别测量了Ti-Si0.84Ge0.16和Ti-Si系统在依次经历700℃及730～900℃两步退火后的方块电阻。对比结果表明，Ti的锗硅化物与Ti的硅化物具有不同的温度特性。造成这一差异的原因与Ge原子在高温下的行为有关。实验利用XRD，研究了Ti（SiGe）2从C49相到C54相的转变。物相分析结果显示，其相转变温度在760～800℃之间。结合实验结论，对采用Ti硅化物工艺的自对准SiGeHBT进行了退火温度的优化，其适合的高温退火温度为850℃左右。Temperature dependences of sheet resistance in Ti-Si0.84Ge0.16 and Ti-Si systems after 700℃and 730 - 900 ℃ thermal annealing are investigated, respectively. Comparisons between the two systems reveal that they have different temperature characteristics. The experiment results show that the behavior of Ge atoms at high temperature may affect the electrical properties of the silicide system. Transformation from C49 phase of Ti（SiGe）2 to C54 phase is studied by XRD, which indicates that the proper phase conversion occurs at about 760 -- 800 ℃. According to the optimization design, thermal annealing temperature suitable for self-aligned Ti-salicidation process in SiGe HBT is around 850 ℃.

关 键 词：Ti基硅化物 SIGE HBT RTA 温度特性 

分 类 号：TN304.2[电子电信—物理电子学]