短波红外InGaAs/InP光伏探测器系列的研制  

FABRICATION OF SHORT WAVELENGTH INFRARED InGaAs/InP PHOTOVOLTAIC DETECTOR SERIES

作　　者：张永刚[1] 顾溢[1] 朱诚[1] 郝国强[1] 李爱珍[1] 刘天东[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《红外与毫米波学报》2006年第1期6-9,共4页Journal of Infrared and Millimeter Waves

基　　金：国家'973'项目基金(G20000683);国家'863'项目基金(2002AA313040)

摘　　要：采用气态源分子束外延方法及应用有源区同质结构及较薄的组分渐变InxGa1-xAs缓冲层,研制了波长扩展的InGaAs/InP光伏探测器系列,其室温下的截止波长分别约为1.9μm,2.2μm.和2.5μm.对此探测器系列在较宽温度范围内的性能进行了细致表征,结果表明在室温下其R0A乘积分别为765,10.3和12.7Ωcm2,比室温降低100K时其暗电流和R0A可改善约3个量级.瞬态特性测量表明此探测器系列适合高速工作,实测响应速度已达数十ps量级.Using homo-junction structure and relative thin linear graded InxGa1-xAs as the buffer layer, extended wavelength InGaAs/InP photo detector series with cut-off wavelength of about 1.9, 2.2 and 2, 5 μm at room temperature were grown by using GSMBE, and their performances over a wide temperature range were extensively investigated. Results show that at room temperature their RoA products are 765,10.3 and 12.7 Ωcm^2 respectively. Cooling down 100K from room temperature, about three orders of improvement could be obtained for the dark current and R0A product. Transient measurements show that those detectors are quite suitable for high speed applications, and their response speed is scores of ps.

关 键 词：光伏探测器 短波红外 INGAAS 气态源分子束外延 

分 类 号：TN2[电子电信—物理电子学]