硼缓冲注入层对氮化硼薄膜生长的影响  

Influence of boron buffer implantation layer on growth of BN films

作　　者：谭俊[1] 蔡志海[1] 张平[1] 

机构地区：[1]装甲兵工程学院装备再制造技术国防科技重点实验室,北京100072

出　　处：《核技术》2006年第2期116-119,共4页Nuclear Techniques

基　　金：国家自然科学基金资助(59971065)项目

摘　　要：采用射频磁控溅射法在注硼的硅和高速钢基体上沉积制备c-BN薄膜,采用红外光谱(Infrared spectra, IR)、X射线光电子能谱(X-ray photoelectron spectrum,XPS)和原子力显微镜(Atomic force microscopy,AFM) 等分析方法对沉积的薄膜进行了表征分析。实验结果表明:硅基体上离子注硼有利于c-BN薄膜内应力的降低; 合适的注硼量注入高速钢基体有利于c-BN的生成和薄膜内应力的降低。AFM分析表明,注硼处理的高速钢基体上沉积的薄膜表面形貌平整,结晶性较好。此外也采用XPS方法对硅和高速钢基体硼过渡层进行了成分与组织结构分析,探索研究了硼缓冲层对c-BN薄膜生长的影响。Cubic boron nitride （c-BN） films were deposited on the high speed steel （HSS） substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by IR, XPS and AFM. The experiment results show that the implantation of boron ions into silicon substrate can reduce the internal stress of films, and when the boron dose is appropriate, the implantation of boron into HSS substrate will be helpful to synthesize c-BN phase and reduce the internal stress of films. AFM shows that the surface roughness of the c-BN film on the implanted HSS is lower and the grain size is smaller. Besides, the phase structure of the boron implanted layer was analyzed by XPS, and the influence of boron implanted layer on the growth of c-BN films was investigated.

关 键 词：立方氮化硼薄膜 高速钢基体 离子注入 射频磁控溅射 

分 类 号：O484.1[理学—固体物理] TQ174.758[理学—物理]