Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor  

Au/n-ZnO/p-Si结构的紫外增强型光电三极管的研制(英文)

作　　者：郭俊福[1] 谢家纯[1] 段理[1] 何广宏[1] 林碧霞[1] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《Journal of Semiconductors》2006年第1期5-8,共4页半导体学报（英文版）

基　　金：国家自然科学基金重大研究计划(批准号:90201038);中国科学院知识创新工程(批准号:KJCX2-SW-04-02)资助项目~~

摘　　要：The fabrication and characterization of a Schottky-emitter heterojunction-collector UV-enhanced bipolar phototransistor （SHBT） are presented. The luminescence peak of the ZnO film is observed at 371nm in the PL spectrum. The sensitivity of the ultraviolet response from 200 to 400nm is enhanced noticeably, and the spectrum response at wavelengths longer than 400nm is also retained, The experiments show that the Au/n-ZnO/p-Si SHBT UV enhanced phototransistor enhances the sensitivity of the ultraviolet response noticeably. The UV response sensitivity at 370nm of the phototransistor is 5-10 times that of a ZnO/Si heterojunction UV enhanced photodiode.研究和制作了一种新型Au／n-ZnO／p-Si结构的肖特基发射极、异质结集电极紫外增疆双极型光电三极管．分析了器件原理，测试了I-V特性、C-V特性以及器件的光谱响应，从200到400nm的紫夕流响应灵敏度得到明显增强而对大于400nm的可见光的响应特性得到保留。实验显示Au／n-ZnO／p-Si结构的紫外增强型的光电三极管对紫外光的响应明显增强，对371nm波长的紫外光的灵敏度是普通n-ZnO／p-Si异质结紫外光电二极管道的5～10倍．

关 键 词：SCHOTTKY HETEROJUNCTION WBG semiconductor ZnO UV phototransistor 

分 类 号：TN321[电子电信—物理电子学]