快速退火气氛对300mm硅片内洁净区和氧沉淀形成的影响  

Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer

作　　者：冯泉林[1,2] 史训达 刘斌 刘佐星 王敬[1] 周旗钢[1,2] 

机构地区：[1]北京有色金属研究总院 [2]有研半导体材料股份有限公司,北京100088 [3]有研半导体材料股份有限公司

出　　处：《Journal of Semiconductors》2006年第1期68-72,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2002AA3Z1110)~~

摘　　要：300mm硅片中厚度合适的洁净区和高密度氧沉淀,有利于对器件有源区金属沾污的吸除,改善栅氧化物的完整性.文中使用Ar,N2/NH3混合气作为快速退火(RTA)气氛,研究RTA气氛对洁净区、氧沉淀形成的影响.研究发现N2/NH3混合气氛处理的硅片表层洁净区明显薄于Ar气氛处理的硅片,氧沉淀密度明显高于Ar气氛处理后的硅片.同时发现在两种气氛下,延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.基于空位增强氧沉淀成核和氮化空位注入的基本原理,就RTA气氛和恒温时间对洁净区和氧沉淀分布的影响进行了讨论.In a 300ram silicon wafer,a suitable denuded zone depth and a high oxygen precipitate density are necessary to get a high gettering efficiency and to improve the gate oxide integrity （GOI）. In this work,Ar and an N2/NH3 mixture gas are applied as rapid thermal annealing （RTA） ambients. It is demonstrated that a high density of oxygen precipitate and a thin denuded zone are obtained in the N2/NH3 mixture ambient, while a low density of oxygen precipitate and a thick denuded zone are observed in the wafer annealed in the Ar ambient. The effect of the RTA ambient and annealing time on the denuded zone and oxygen precipitates is discussed.

关 键 词：洁净区 氧沉淀 单晶硅片 内吸杂 RTA 

分 类 号：TN304[电子电信—物理电子学]