部分局域电荷槽SOI高压器件新结构  

A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench

作　　者：罗小蓉[1] 张波 李肇基[1] 唐新伟[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2006年第1期115-120,共6页半导体学报（英文版）

基　　金：国家自然科学基金重点资助项目(批准号:60436030)~~

摘　　要：提出了部分局域电荷槽SOI(partial locating charge trench SOI,PTSOI)高压器件新结构.该结构在槽内产生随漏极电压变化的界面电荷,此电荷使埋氧层纵向电场从传统的3ESi,C升高到接近Si O2的临界击穿电场ESi O2,C;另外,硅窗口将耗尽层引入衬底,因而提高了器件的击穿电压.同时,硅窗口的存在大大缓解了自热效应.借助二维器件仿真研究了器件的击穿特性和热特性.结果表明,漂移区厚2μm,埋氧层厚1μm的PTSOI耐压可达700V以上;对埋氧层厚1μm和3μm的PTSOI,其器件的最高温度分别比TSOI低6K和25K.A novel high voltage device structure partial locating charge trench SOI （PTSOI） is proposed. Interface charges changing with the drain voltage are introduced in the trench. The charges make the vertical electric field of the buried oxide increase from about 3ESi,c to the critical breakdown electric field of SiO2. In addition, the depletion layer spreads into the substrate through the silicon window. Hence the breakdown voltage is enhanced. The self-heating effect of SOI devices is alleviated as a result of the silicon window. The breakdown characteristics and thermal characteristics are researched by a 2D device simulator. A breakdown voltage greater than 700V can be obtained for the PTSOI device with a 2μm thick Si layer and 1μm buried oxide. The maximum temperature of the PTSOI device is 6K and 25K lower than that of TSOIs with 1μm and 3μm thick buried oxides,respectively.

关 键 词：电荷槽 界面电荷 自热效应 纵向电场 击穿电压 

分 类 号：TN386[电子电信—物理电子学]