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作 者:张锡健[1] 马洪磊[1] 王卿璞[1] 马瑾[1]
出 处:《无机材料学报》2006年第1期235-238,共4页Journal of Inorganic Materials
基 金:教育部博士点基金(20020422056)
摘 要:采用射频磁控溅射法在80℃衬底温度下制备了MgxZn1-xO(x=0.23)薄膜,用X射线衍射(XRD)、高分辨透射电镜(HRTEM)、喇曼(Raman)光谱和原子力显微镜(AFM)研究了薄膜的结构特性.XRD和HRTEM分析结果表明MgxZn1-xO薄膜为单相六角纤锌矿结构,且具有沿c轴的择优取向,晶格常数与ZnO晶体的近似相等. Raman光谱不仅揭示 MgxZn1-xO薄膜具有六角纤锌矿结构,而且也表明MgxZn1-xO薄膜的结晶质量比在相同条件下制备的ZnO薄膜好. AFM图像则显示出Mg=Zn1-xO薄膜为多晶结构.MgxZn1-xO films (x=0.23) were prepared on silicon substrates by radio frequency magnetron sputtering at 80℃. The structure properties of MgxZn1-xO films were studied by using XRD, HRTEM, Raman spectra and AFM. The analyses of XRD and HRTEM indicate that the MgxZn1-xO films have hexagonal wurtzite single-phase structure and a preferred orientation with c axis perpendicular to the substrates. The lattice constants of MgxZn1-xO films are similar to those of ZnO films. Raman spectra of ZnO and MgxZn1-xO films reveal that the MgxZn1-xO films have not only hexagonal wurtzite structure, but also higher crystalline quality than ZnO films. AFM image indicates that the MgxZn1-xO films are polycrystalline.
分 类 号:TN304[电子电信—物理电子学]
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