采用双向偏置曝光的成像干涉光刻技术  

Imaging interferometric lithography with bidirection biased illumination

作　　者：冯伯儒[1] 张锦[1] 刘娟[1] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室,四川成都610209

出　　处：《光电工程》2006年第1期1-5,共5页Opto-Electronic Engineering

基　　金：国家自然科学基金资助(60276043)

摘　　要：成像干涉光刻技术(IIL)具有干涉光刻技术(IL)的高分辨力和光学光刻技术(OL)产生任意形状集成电路特征图形的能力。在IIL中,按掩模图形的不同空间频率成份分区曝光,并使其在抗蚀剂基片上非相干叠加,得到高分辨抗蚀剂图形。本文在研究一般三次曝光IIL原理基础上,提出采用沿X轴正、负方向以及沿Y轴正、负方向偏置的双向偏置照明,分别曝光+X方向、-X方向、+Y方向、-Y方向的高空间频率分量并与垂直于掩模方向的低空间频率分量曝光相结合的五次曝光IIL。理论和计算模拟表明,该方法可以提高图形对比度和分辨力,并减小因调焦误差引起的图形横向位移误差,有利于改善抗蚀剂图形质量。Imaging Interferometric Lithography （IIL） has high resolution of interferometric lithography （IL） and ability for printing arbitrary patterns of optical lithography （OL）. By exposing different spatial frequency sections respectively and making the exposures noncoherently superposed on photoresist coated substrate, better resist patterns with higher resolution and arbitrary IC patterns can be obtained. In the paper, based on conventional tri-exposure IIL, proposed is a new IIL which uses five exposures, including four biased exposures for higher spatial frequency components of patterns on mask in ＋X, -X, ＋Y and -Y directions along X and Y axes, respectively, and a perpendicularly illuminated exposure relative to mask plane with lower spatial frequency. Theoretical research and computer simulation show that the new IlL can obtain higher resolution and better resist patterns as well as decrease position error of patterns out of focusing.

关 键 词：光学光刻 干涉光刻 成像干涉光刻 分辨力增强技术 双向偏置照明 

分 类 号：TN305.7[电子电信—物理电子学]