低温湿氧氧化提高多孔硅发光的稳定性  

IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

作　　者：陈华杰[1] 张甫龙[1] 范洪雷[1] 阵溪滢 黄大鸣[1] 俞鸣人 侯晓远[1] 李谷波[2] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433 [2]四川工业学院物理实验室,成都611744

出　　处：《物理学报》1996年第2期297-303,共7页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题

摘　　要：用低温湿氧氧化方法对多孔硅进行后处理,获得了光致发光强度强、发光稳定的样品,顺磁共振谱表明这种样品表面的悬挂键密度较小,通过对样品红外光谱的测试和分析,指出SiH(O_3),SiH(SiO_2),SiH_2(O_2)结构的产生是实验中多孔硅稳定性提高的原因.The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3),SiH(SiO2) and SiH(O2) structure.

关 键 词：氧化 多孔硅 发光稳定性 低温湿氧 

分 类 号：TN204[电子电信—物理电子学]