溶胶凝胶法制备ZnO薄膜及性质研究  被引量:8

Preparation and properties of sol-gel ZnO thin films

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作  者:兰伟[1] 朋兴平[1] 刘雪芹[1] 何志巍[1] 王印月[1] 

机构地区:[1]兰州大学物理科学与技术学院,甘肃兰州730000

出  处:《兰州大学学报(自然科学版)》2006年第1期67-71,共5页Journal of Lanzhou University(Natural Sciences)

基  金:国家自然科学基金资助项目(50272027).

摘  要:以二水醋酸锌为原料,使用溶胶凝胶法在(100)Si衬底上旋转涂敷得到ZnO薄膜.采用傅立叶变换红外光谱和X射线衍射(XRD)分析经N2、空气、O2不同气氛400℃退火ZnO薄膜的成分和结构差异.使用XRD、原子力显微镜和光致发光手段重点研究了N2气氛条件下,ZnO薄膜结构与发光特性随退火温度的变化规律,发现400℃下退火更适于干凝胶薄膜经历结构弛豫,生成具有(002)择优取向、性质优良的纳米晶ZnO薄膜.计算该样品的晶粒尺寸为41.6 nm,晶格常数α=0.3253nm, c=0.521 nm,其PL光谱出现495 nm附近强的绿光发射峰,可能源于ZnO纳米晶粒表面缺陷氧空位(Vo).随着退火温度升高,ZnO生成量减少、晶粒体表面积比(S/V)减小共同作用导致绿光峰强度变弱.Zinc oxide (ZnO) thin films were deposited on (100) silicon substrates by spin-coating using solgel synthesis and zinc acetate dihydrate was used as a starting material. The effects of different annealing atmospheres and temperatures on composition, and the structural and optical properties of ZnO thin films were investigated using Fourier transform infrared spectroscope, X-ray diffraction, atomic force microscope and photohuninescence. It was found that the ZnO thin film annealed at 400℃ in N2 ambient exhibited the optimal crystallinity and photoluminescence properties. The heat treatment at 400℃ was more suitable for the dried gel film to undergo structural relaxation, and hence more ZnO was generated in the film. The lattice constants of the ZnO samples annealed at 400℃ in N2 were obtained from XRD date (a= 0.325 3 nm, c = 0.521 nm) and a green emission around 495 nm was found in its PL spectrum due to oxygen vacancy located at the grain surface. Because ZnO grew less and the ratio of surface to volume (S/V) decreased, the green peaks decreased in intensity the increasing of the annealing temperature.

关 键 词:ZNO薄膜 退火 光致发光 溶胶凝胶 

分 类 号:O472.3[理学—半导体物理] TN304.21[理学—物理]

 

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