离子束增强沉积法制备二氧化铪薄膜  

Investigation of Hafnium Dioxide Film Synthesized by Ion Beam Enhanced Deposition

作　　者：陶凯[1] 俞跃辉[1] 郑智宏[1] 邹世昌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所

出　　处：《半导体技术》2006年第3期209-211,共3页Semiconductor Technology

摘　　要：利用离子束增强沉积(IBED)技术在硅衬底上沉积得到50nm的二氧化铪薄膜。卢瑟福背散射(RBS)的结果指出样品表面有过量氧元素存在。X射线光电子能谱(XPS)显示退火前后薄膜内部化学键没有变化。透射电子显微镜(TEM)表明界面处有非晶铪氧硅化合物生成。电子衍射(ED)显示所制备的二氧化铪薄膜呈现长程无序、区域有序的多晶态。实验为HfO2作为高尼电介质在集成电路制造中的应用提供了一种简单有效的方法。Hafnium dioxide film with 5 0nm thickness were deposited on silicon substrates by IBED （ion beam enhanced deposition）. RBS （Rutherford back scattering） results indicated there was redundant oxygen on the film surface. XPS showed the chain in the film has no change before or after annealing TEM （transmission electron microscopy） pictures showed that there was an amorphous layer at the interface and ED （electron diffraction） pointed out that the deposited films were polycrystalline. The experiment results provide a new and easy method to fabricate HfO2 thin films for VLSI applications.

关 键 词：二氧化铪 离子束增强沉积 高K电介质 

分 类 号：TN304.055[电子电信—物理电子学]