Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode  

n-ZnO/p-GaN异质结构发光二极管的制备与特性(英文)

作　　者：周昕[1] 顾书林[1] 朱顺明[1] 叶建东[1] 刘伟[1] 刘松民[1] 胡立群[1] 郑有炓[1] 张荣[1] 施毅[1] 

机构地区：[1]南京大学物理系江苏省光电信息功能材料重点实验室,南京210093

出　　处：《Journal of Semiconductors》2006年第2期249-253,共5页半导体学报（英文版）

摘　　要：We report the fabrication and characterization of light-emitting diodes based on n-ZnO/p-GaN heterojunctions. The n-type ZnO epilayer is deposited by metalorganic chemical vapor deposition （MOCVD） on a MOCVD grown Mg-doped p-GaN layer to form a p-n heterojunction. During the etching process, the relation between the etching depth and the etching time is linear in a HF and NH4 CI solution of a certain ratio. The etching rates of the SiO2 and ZnO are well controlled,which are essential for device fabrication. The current-voltage relationship of this heterojunction shows a diode-like rectifying behavior. In contrast to previous reports,electroluminescence （EL） emissions are observed by the naked eye at room temperature from the n-ZnO/p-GaN heterojunction under forward-and reverse-bias. The origins of these EL emissions are discussed in comparison with the pho- toluminescence spectra.报道了n-ZnO/p-GaN异质结构发光二极管的制备及其发光特性.采用金属有机气相外延技术在Mg掺杂p型GaN衬底上外延n型ZnO薄膜以形成p-n结.实验发现在一定配比的HF酸和NH4Cl溶液中,腐蚀深度和腐蚀时间呈线性关系,并且二氧化硅和ZnO的腐蚀速率得到很好的控制,这对器件制备的可靠性非常重要.电流-电压(I-V)特性测试显示该器件结构具有明显的整流特性.室温下,在正反向偏压状态下都可用肉眼观察到电致发光现象.同时,通过与光致发光谱进行比较,对电致发光谱中发光峰的起源和发光机制进行了探讨.

关 键 词：ZnO/GaN heterojunction light-emitting diode metalorganic chemical vapor deposition etchingtechnology 

分 类 号：TN312.8[电子电信—物理电子学]