磁控溅射法制备NiCr/NiSi薄膜热电偶温度传感器  

Development of NiCr/NiSi Thin-film Thermocouples Tempreture Sensor by Magnetron Sputting

作　　者：贾颖[1] 孙宝元[1] 曾其勇[1] 徐静[1] 

机构地区：[1]大连理工大学精密与特种加工重点实验室,辽宁大连116024

出　　处：《仪表技术与传感器》2006年第2期1-3,共3页Instrument Technique and Sensor

基　　金：中国科学院物理研究所重大基金项目(2001Z0301)

摘　　要：介绍了NiCr/NiSi薄膜热电偶制作方法与过程。与多弧离子镀法相比,采用磁控溅射法镀制的热电偶薄膜成分与靶材接近,膜层致密均匀、平整光滑,临界厚度薄。对研制的NiCr/NiSi薄膜热电偶进行了静态标定与动态标定,薄膜热电偶的灵敏度为40.1μV/℃,线性误差不大于0.75%,时间常数小于0.35 ms.最后将薄膜热电偶温度传感器用于化爆材料模拟切削试验。The fabrication method and process of NiCr-NiSi thin-film thermoeouples （TFT） are introduced reasonedly. Compared with Multiple Are Ion plating, the thin-rdm of thermouple which are developed by the Magnetron Spurting are more compactive and smooth, and the contributions are close to the target. The static and dynamic calibration of TFT are proposed, and it is concluded that the Sensitivity are 40.1μV/℃, linear error is no greater than 0.75% ,and the constant time is less than 0.35ms. At last, TFT are applied to the chemical explosive material simulation cutting test.

关 键 词：薄膜热电偶 磁控溅射 化爆材料 切削温度 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置] TB43[自动化与计算机技术—控制科学与工程]