新型微波有源混频放大MMIC设计  

Design of New Active Microwave Mixer and Amplification Integrated Circuit(MMIC)

作　　者：李佩[1] 陈兴国[1] 

机构地区：[1]中国电子科技集团公司第38研究所,合肥230031

出　　处：《微波学报》2006年第1期27-30,共4页Journal of Microwaves

摘　　要：采用0.25μm GaAs PHEMT工艺实现了单片S波段(2.6GHz^3.6GHz)有源混频放大器。电路采用改进的差分对本振和共栅射频混频形式,具有较大的变频增益和高的隔离度,同时将补偿放大器与变频器结合在一起,提高了单元电路的集成度。本文着重介绍了建模分析和应用ADS软件进行仿真优化。测试结果:输入LO和RF,LO和IF的隔离度都大于50dB,变频增益大于12 dB。A monolithic S-band （2.6GHz ～ 3, 6GHz）mixer and amplifier module has been developed by adopting the 0. 25μm GaAs PHEMT technology. Applied to this circuit improved differential local oscillation and mutual grid RF mixer, hereby achieving a higher conversion gain and isolation. Furthermore combination of the amplifier and mixer, enhances the integration of elementary circuits. This paper emphasizes the model analysis and the simulation and optimization practiced through applying the ADS software. It is proven from the experimental results that both isolation between the RF part with the LO and hetween the LO with the IF part are higher than 50 dB, and the frequency conversion is higher than 12 dB.

关 键 词：GAAS PHEMT工艺 单片有源混频放大器 ADS软件 变频增益 隔离度 

分 类 号：TN722[电子电信—电路与系统]