GaP：N发光二极管深能级对发光特性的影响  

The Influence of Deep Levels in GaP: N Light-Emitting Diodes on the Luminescence Characteristic

作　　者：苏锡安[1] 高瑛[1] 赵家龙[1] 刘学彦[1] 

机构地区：[1]中国科学院激发态物理开放实验室

出　　处：《吉林大学自然科学学报》1996年第1期58-60,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：国家自然科学基金;中国科学院激发态物理开放实验室基金

摘　　要：测量了ＧａＰ：Ｎ绿色发光二极管老化前后的可见和近红外发光光谱．从谱中可见，老化后的５９０ｕｍ和１２６０ｕｍ发光带的发光强度较老化前明显增强，６５０ｕｍ有新的发光带．研究了老化产生的深能级的来源及对ＬＥＤ发光特性的影响．The visible and the near-infrared electroluminescence spectra of GaP: N light-emitting diodes (LEDs) were measured before and after degradation. The 650 um luminescence band was obserued in the spectra after degradation. The luminescence intensities of 590 um and 1260 um bands are strorger after degradation than before degradation. The deep levels related to the phosphorus and nitrogen due to degradation strongly influence the luminescence properties of GaP: N LED.

关 键 词：发光二极管 深能级 电致发光 半导体 磷化镓 

分 类 号：TN364.2[电子电信—物理电子学]