双极模式静电感应晶体管(BSIT)  

Bipolar Mode Static Induction Transistor

作　　者：韩直 

出　　处：《半导体情报》1990年第2期21-24,共4页Semiconductor Information

摘　　要：一种具有常关型特性的新型功率器件已经研究成功了,该器件称为双极模式静电感应晶体管,器件阻断电压达600V,漏极电流1.5A,开通时间120ns,关断时间320ns。A new silicon power device with normally-off characteristics has been developed. It is called bipolar mode static induction transistor (BSIT), In this device blocking voltage uo to 600V and drain current up to 1.5A have been obtained. The turn-on time is 120ns, turn-off time is 320ns.

关 键 词：双极 静电感应 晶体管 BSIT 

分 类 号：TN386.7[电子电信—物理电子学]