离子注入硅形成绝缘埋层的红外反射谱分析  

Reflective IR-Spectrum Study of Buried Insulator Layer in Ion Implanted Silicon

作　　者：方子韦[1] 俞跃辉[1] 林成鲁[1] 邹世昌[1] 

机构地区：[1]中国科学院上海冶金研究所离子束开放研究实验室

出　　处：《Journal of Semiconductors》1990年第4期262-269,共8页半导体学报（英文版）

摘　　要：高剂量、大束流的O^+或N^+注入硅中经高温退火后能形成质量很好的SOI(Silicon onInsulater)材料。在波数范围为5000—1500cm^(-1)的红外波段内,硅及SiO_2或Si_3N_4绝缘埋层对红外光均无吸收。采用计算机模拟不同处理条件下的样品在该波段范围的红外反射谱,得到了样品的折射率随深度的变化关系,所得结果与透射电子显微镜、离子背散射等方法所得的分析结果符合得很好。High quality SOI(silicon on Insulator) materials with single crystalline silicon top layercan be obtained by O^+ or N^+ implantation with high dosage,large beam current into siliconfollowed by a high temperature annealing.lnfrarec light with wavenumber ranging from5000 cm^(-1)to 1500 cm_(-1)is not absorbed by silicon,SiO_2 and Si_3N_4.In this wavenumber range,the reflective IR-spectra of samples prepared in different ways were simulated and the refractiveindex profiles were obtained.The results are in consistent with that obtained from transmissionelectron microscope and Rutherford backsca tering and channeling analysis.

关 键 词：离子注入 硅 红外反射谱 绝缘埋层 

分 类 号：TN305.3[电子电信—物理电子学]