La,Ce及Nd稀土金属硅化物的生成  

Formation of La, Ce and Nd Rare Earth Metal Silicides on Silicon

作　　者：牟善明 王佑祥[1] 殷士端[1] 张敬平[1] 刘家瑞[2] 

机构地区：[1]中国科学院半导体研究所 [2]中国科学院物理研究所

出　　处：《Journal of Semiconductors》1990年第7期533-538,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用AES,X-射线衍射和RBS等方法分析研究了热反应与离子束混合La,Ce及Nd稀土金属膜和硅反应生成硅化物的物理过程。实验表明:不同的生成条件如热反应温度或离子束混合的剂量能生成富金属硅化物,单硅化物和二硅化物,但最终稳定相都是二硅化物LaSi_2,CeSi_2和NdSi_2。氧的沾污不但影响生成的硅化物相和质量,甚至阻止硅化物的生成。镀膜时的衬底温度和防止氧化的保护层对硅化物薄膜的质量,平整度,均匀性等都有明显的影响。Auger Electron Spectroscopy, X-Ray Diffraction and Rutherford Backscattering Spectrometryare used to investigate the formation of La, Ce, and Nd rare earth metal silicides fromthermal and ion beam induced reaction between Si and rare earth metals. Metal-rich silicides,monosilicides, disilicides are formed at different growth conditions, such as annealing temperature,implantation dose, etc.The contamination of oxygen not only inhibits the formation ofsilicides, but also to some extent determine the silicide phases and the quality of thin films.The prominent influence of substrate temperature and coating overlayer to prevent from oxidationon roughness,uniformity,and quality of silicide thin film is also discussed.

关 键 词：稀土金属 硅化物 热反应 离子束 

分 类 号：TN304.12[电子电信—物理电子学]