Pd/a-Si:H界面反应研究  

Investigation of Interfacial Reaction of Pd/a-Si:H

作　　者：沈波[1] 赵特秀[1] 刘洪图[1] 吴志强[1] 金澍 许振嘉[2] 

机构地区：[1]中国科技大学物理系 [2]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第8期578-582,共5页半导体学报（英文版）

基　　金：中国科技大学结构分析开放实验室科研基金

摘　　要：本文使用IERS(干涉增强喇曼散射),TEM和SIMS等方法研究了Pd/a-Si:H界面反应的热退火行为,发现Pd/a-Si:H界面在室温下形成非晶互混层;经160℃退火,形成晶态Pd_2Si相,比Pd/c-Si界面反应温度低;经500℃退火,未与Pd反应的非晶硅出现晶化现象。本文还观察了界面反应过程中氢的行为,发现由于界面反应,导致a-Si:H中的氢在较低温度下就开始释放。By means of IERS, TEM, SIMS and other methods, the interfacial reaction of Pd/a-Si:H at different annealing temperatures is investigated,and the crystallization of a-Si:H andthe behaviour of hydrogen during the Pd/a-Si:H interfacial reaction is analysed. It is foundthat the intermixing layer in the interface was formed at room temperature. The reactiontemperature for Pd/a-Si:H interface is about 160℃ lower than that for Pd/c-Si interface.After annealing at 500℃, the a-Si:H in Pd/a-Si:H interface was crystallized by metal-inducedaction.During the reaction of Pd/a-Si:H interface, the hydrogen evolution in a-Si:H was alsoobserved.

关 键 词：硅化物 界面反应 喇曼散射 TEM法 

分 类 号：TN304.24[电子电信—物理电子学]