中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响  

Influence of Intrinsic Diffusion Caused by Neutral Vacancy on Arsenic Ion Redistribution during Annealing

作　　者：汤庭鳌[1] 郑大卫[1] C.A.Paz de Araujo 

机构地区：[1]复旦大学电子工程系 [2]University of Colorado at Colorado Springs,USA

出　　处：《Journal of Semiconductors》1990年第8期642-645,共4页半导体学报（英文版）

摘　　要：本文对硅中砷扩散系数考虑了中性空位引起的本征扩散项D^0的影响,推导而得出D^0对表面浓度N_s,结深x_j(t)等的影响大约为5-10％。在离子注入退火的解析模型中考虑其影响是有实际意义的。The influence of the intrinsic diffusion D_i^0 caused by neutral vacancy on arsenic diffusioncoefficient is considered.It causes about 5-10% correction to the surface concentration N_s, junctiondepth X_j(t), etc. It is meaningful to include tie influence of D_i^0 in the analytical modelfor ion implantation annealing.

关 键 词：离子注入 硅 砷离子 退火 本征扩散 

分 类 号：TN305.3[电子电信—物理电子学]