液相外延生长In_xGa_(1-x)As_ySb_(1-y)/GaSb及其性质研究  

LPE Growth and Properties of In_xGa_(1-x)As_ySb_(1-y)Lattice-Matched to (100) GaSb

作　　者：刘学锋[1] 龚秀英[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第10期746-750,共5页半导体学报（英文版）

基　　金：国家高技术基金

摘　　要：本文利用液相外延方法,在较大组分范围内(0≤x≤0.17,0≤y≤0.12),成功地生长出了晶格匹配于(100)GaSb衬底的In_xGa_(1-x)As_ySb_(1-x)四元材料,并对其性质进行了实验观察和研究。结果表明,这种表面光亮、层厚均匀、异质结界面平直以及纯度较高、完整性好的外延薄膜是制作超长波长光电器件的理想材料。In_xGa_(1-x)As_ySb_(1-y)epitaxial layers lattice matched to (100) GaSb substrates have been successfully grown in a composition range (0<x<0.17, 0<y<0.12) by LPE technique. Double crystal X-ray diffraction measurements show that the minimum lattice mismatch, <2×10^(-4), can be reached if the liquid compositions are carefully designed.The 80 K cathode-luminescence spectra on these epitaxial layers indicate that the bandgap energy range is from 0.733 eV 0.635 eV, and the longest peak wavelength of 1.95μm has been reached with the maximum solid composition x=0.17, y=0.12. Infrared absorption spectrum of this epilayer shows an emission wavelength of 2.18μm at room temperature.

关 键 词：化合物半导体 液相外延 晶格匹配 

分 类 号：TN304.26[电子电信—物理电子学]