剩余杂质对Hg_(0.8)Cd_(0.2)Te晶体光吸收的影响  

Influence of Residual Impurity on Optical Absorption in Hg_(0.8)Cd_(0.2)Te Crystal

作　　者：王珏[1] 陆卫[1] 刘激鸣[1] 俞振中[1] 汤定元[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《Journal of Semiconductors》1990年第12期950-953,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：研究了Hg_(0.8)Cd_(0.2)Te晶体经吸除工艺处理前后的透射光谱,发现样品经吸除处理后的光吸收发生明显变化,分析认为因吸除工艺降低了样品内的剩余杂质含量,从而减少了杂质参与的光吸收,利用受主“掺杂”实验进一步验证了上述解释。The infrared transmission spectra of in getterec and ungettered Hg_(0.8)Cd_(0.2)Te sampleshave been compared. It is found that the long wave absorption was relatively reduced and theabsorption edges were moved to the short wave direction after gettering. The experimental phenomenahave been explained according to the process of residual impurity related optical absorption.In addition, the explaination has also been verified in acceptor doped Hg_(0.8)Cd_(0.2)Tewith mercury vacancies.

关 键 词：剩余杂质 HGCDTE晶体 光吸收 

分 类 号：TN304.26[电子电信—物理电子学]