薄膜SOI结构中反型层厚度与薄膜厚度的关系  

Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures

作　　者：夏永伟[1] 王守武[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第12期962-965,共4页半导体学报（英文版）

摘　　要：本文从理论上分析了薄膜SOI结构中反型层厚度与薄膜厚度的关系。为设计薄膜MOS/SOI器件引进了一个新的参数──薄膜整体反型临界厚度。分析认为,为使超薄膜MOS/SOI器件高速和高功率工作,有必要使薄膜厚度接近整体强反型临界厚度。The dependence of inversion layer thickness on film thickness in thin-film SOI structureis analysed theoretically by using computer simulation. A new concept and parameter, the criticalthickness of thin film all-bulk inversion, are introduced for the design of thin-film MOS)SOI devices. It is necessary to select the film thickness near to the all-bulk strong inversion criticalthicknesss in order to get high speed and high power working of ultrathin film MOS/SOIdevices.

关 键 词：薄膜 SOI 反型层厚度 薄膜厚度 

分 类 号：TN304.055[电子电信—物理电子学]