离子注入快速热退火制造类视见函数光电探测器  

Fabrication of Silicon Photoelectric Detector with Visibility Curve Using Ion Implantation and Rapid Thermal Annealing

作　　者：郑国祥[1] 邬建根[1] 王昌平[1] 朱景兵 屈逢源 周寿通 

机构地区：[1]复旦大学物理系 [2]上海无线电十七厂

出　　处：《Journal of Semiconductors》1990年第12期915-921,共7页半导体学报（英文版）

基　　金：国家自然科学基金会;上海市科委的资助

摘　　要：采用离子注入,红外快速热退火方法制造硅探则器,由喇曼散射方法检测损伤消除效果,确定快速热退火的温度,借助本征吸除等工艺技术,可以方便地得到性能优良的类视见函数光电探测器。The fabrication of silicon photoelectric detector by ion implantation and infrared rapidthermal annealing is reported. Teh effect of damage elimination is evaluated by Raman scatteringmethod, and the optimal annealing temperature is found. By means of intrinsic getteringand other techniques, it is easy to get excellent photoelectric detector with spectral sensitivityclosed to the human visibility curve.

关 键 词：光电探测器 离子注入 热退火 

分 类 号：TN36[电子电信—物理电子学]