超高速VLSI中多晶硅发射极晶体管串联电阻的测量  

Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI

作　　者：赵宝瑛[1] 何美华[1] 罗葵 张利春[1] 

机构地区：[1]北京大学微电子学研究所

出　　处：《电子学报》1996年第5期87-91,共5页Acta Electronica Sinica

摘　　要：本文对目前流行的测量晶体管串联电阻的常规方法进行了理论分析和实验验证，结果表明，用常规方法测量多晶硅发射极晶体管串联电阻的误差很大。这里提出了一套测量晶体管串联电阻的新方法。新方法克服了常规方法的困难，满足了测量多晶硅发射极晶体管串联电阻的要求。The commonly used methods to measure series resistances in bipolar transistors,including the open-collector method of extraction for emitter series resistance Re, the Ic-Vbe method of measurement of base series resistance Rb and the Forced-Beta method of getting collector series resistance Rc, are analyzed and tested. The results show that the above methods aren't available to measure series resistances in polysilicon emitter bipolar transistors. A new set of measurement methods of series resistances in bipolar transistors is presented, it overcomes conventional method' s troubles and is suitable for measurement of series resistances in polysihcon emitter transistors for high speed VLSI.

关 键 词：多晶硅发射极 VLSI 晶体管 串联电阻 测量 

分 类 号：TN470.7[电子电信—微电子学与固体电子学]