高k栅极电介质材料与Si纳米晶体管  

High k Gate Dielectric and Materials Si Nanotransistor

作　　者：张邦维[1] 

机构地区：[1]湖南大学应用物理系,长沙410082

出　　处：《微纳电子技术》2006年第3期113-120,共8页Micronanoelectronic Technology

摘　　要：Si MOS晶体管进入nm尺度后,原来通用的栅极介电材料SiO2已不能适应纳米晶体管继续小型化的需要,必须用高k栅极电介质材料取而代之。对Si纳米晶体管为什么要采用高k栅极电介质材料、此类材料的物理性能和电学性能、与Si之间的相容性以及材料中缺陷对其性能和器件的影响等一系列问题进行了论述,并且讨论了高k栅极电介质材料的进一步发展。After scaling down to nanosized range, the usual used %02 for the gate dielectric of MOS transistor can not be suitable for the further scaling down of nanotransistors, the high k gate dielectric should be used. A series of problems, such as why the high k gate dielectric must be used in the nanotransistors, the physical and electric properties of the materials, compatibility between Si and such kind of materials, and the defects of the materials on the properties and effects on the devices are described. In addition, the future development of the high k dielectric is also discussed.

关 键 词：电介质材料 高K电介质 物理和电性能 纳米晶体管 

分 类 号：O48[理学—固体物理] TN386.1[理学—物理]